absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -29 i d @ v gs = -12v, t c = 100c continuous drain current -18 i dm pulsed drain current ? -116 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 mj i ar avalanche current ? -29 a e ar repetitive avalanche energy ? 30 mj dv/dt p eak diode recovery dv/dt ? -20 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (t ypical) g pre-irradiation international rectifier?s rad-hard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this tech- nology has over a decade of proven performance and reliability in satellite applications. these de- vices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these de- vices retain all of the well established advantages of mosfets such as voltage control, fast switch- ing, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet surface mount (smd-2) 11/21/00 www.irf.com 1 for footnotes refer to the last page product summary part number radiation level r ds(on) i d qpl part number IRHNA9260 100k rads (si) 0.154 ? -29a jansr2n7426u irhna93260 300k rads (si) 0.154 ? -29a jansf2n7426u smd-2 features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight IRHNA9260 jansr2n7426u 200v, p-channel ref: mil-prf-19500/655 rad-hard ? hexfet ? technology pd - 93969 4 .com u datasheet
IRHNA9260, jansr2n7426u pre-irradiation 2 www.irf.com note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? -29 i sm pulse source current (body diode) ? ? ? -116 v sd diode forward voltage ? ? -3.0 v t j = 25c, i s = -29a, v gs = 0v ? t rr reverse recovery time ? ? 738 ns t j = 25c, i f = -29a, di/dt -100a/ s q rr reverse recovery charge ? ? 12 cv dd -50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.42 r thj-pcb junction-to-pc board ? 1.6 ? soldered to a 2? square copper-clad board c/w electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage -200 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.27 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.154 ? v gs = -12v, i d = -18a resistance ? ? 0.159 v gs = -12v, i d = -29a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 14 ? ? s ( )v ds > -15v, i ds = -18a ? i dss zero gate voltage drain current ? ? -25 v ds = -160v ,v gs =0v ? ? -250 v ds = -160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 300 v gs = -12v, i d = -29a q gs gate-to-source charge ? ? 65 nc v ds = -100v q gd gate-to-drain (?miller?) charge ? ? 58 t d (on) turn-on delay time ? ? 37 v dd = -100v, i d = -29a t r rise time ? ? 141 r g = 2.35 ? t d (off) turn-off delay time ? ? 148 t f fall time ? ? 220 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 6143 ? v gs = 0v, v ds = -25v c oss output capacitance ? 915 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 159 ? na ? ? nh ns a measured from the center of drain pad to center of source pad 4 .com u datasheet
www.irf.com 3 IRHNA9260, jansr2n7426u table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -200 ? -200 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage ? -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? - 25 ? -25 a v ds = -160v, v gs =0v r ds(on) static drain-to-source ? ? 0.155 ? 0.161 ? v gs = -12v, i d =-18a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.154 ? 0.160 ? v gs = -12v, i d = -18a on-state resistance (smd-2) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. 1. part number IRHNA9260 2. part number irhna93260 fig a. single event effect, safe operating area v sd diode forward voltage ? ? -3.0 ? -3.0 v v gs = 0v, i s = -29a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page radiation characteristics table 2. single event effect safe operating area ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =20v cu 28.0 285 43.0 -200 -200 -200 -200 ? br 36.8 305 39.0 -200 -200 -125 -75 ? -250 -200 -150 -100 -50 0 0 5 10 15 20 vgs vds cu br 4 .com u datasheet
IRHNA9260, jansr2n7426u pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 5.0 6.0 7.0 8.0 9.0 10.0 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -29a 4 .com u datasheet
www.irf.com 5 IRHNA9260, jansr2n7426u fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 2000 4000 6000 8000 10000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 50 100 150 200 250 300 350 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -29a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 -v ds , drain-tosource voltage (v) 1 10 100 1000 -i d , drain-to-source current (a) tc = 25 c tj = 150 c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s 4 .com u datasheet
IRHNA9260, jansr2n7426u pre-irradiation 6 www.irf.com v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 30 t , case temperature ( c) -i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds -12v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - 4 .com u datasheet
www.irf.com 7 IRHNA9260, jansr2n7426u q g q gs q gd v g charge -12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms pre-irradiation 25 50 75 100 125 150 0 300 600 900 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -13a -18.3a -29a fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v -12v t p v ( br ) dss i as d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v . 4 .com u datasheet
IRHNA9260, jansr2n7426u pre-irradiation 8 www.irf.com ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a ? total dose irradiation with v ds bias. -160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd =-50v, starting t j = 25 c, l = 1.2mh, peak i l = -29a, v gs = -12v ? i sd - 29a, di/dt -377a/ s, v dd - 200v, t j 150 c ? pulse width 300 s; duty cycle 2% footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 11/00 case outline and dimensions ? smd-2 4 .com u datasheet
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